IRF5305L【PDF 2/11 页】MOSFET P-CH 55V 31A TO-262

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

IRF5305S/L

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V (BR)DSS

Drain-to-Source Breakdown Voltage

-55

–––

––– V V GS = 0V, I D = -250μA

? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient

–––

-0.034

–––

V/°C Reference to 25°C, I D = -1mA ?

R DS(on)

Static Drain-to-Source On-Resistance

–––

–––

0.06

?

V GS = -10V, I D = -16A ?

––– R G = 6.8 ?

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

-2.0

8.0

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

14

66

39

63

-4.0 V V DS = V GS , I D = -250μA

––– S V DS = -25V, I D = -16A ?

-25 V DS = -55V, V GS = 0V

μA

-250 V DS = -44V, V GS = 0V, T J = 150°C

100 V GS = 20V

nA

-100 V GS = -20V

63 I D = -16A

13 nC V DS = -44V

29 V GS = -10V, See Fig. 6 and 13 ??

––– V DD = -28V

––– I D = -16A

ns

––– R D = 1.6 ?, See Fig. 10 ??

L S

Internal Source Inductance

–––

7.5

–––

nH

Between lead,

and center of die contact

C iss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

–––

–––

–––

1200

520

250

––– V GS = 0V

––– pF V DS = -25V

––– ? = 1.0MHz, See Fig. 5 ?

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ?

––– –––

––– –––

-31

-110

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

G

D

S

V SD

Diode Forward Voltage

––– –––

-1.3 V T J = 25°C, I S = -16A, V GS = 0V ?

t rr

Q rr

t on

Notes:

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– 71 110 ns T J = 25°C, I F = -16A

––– 170 250 nC di/dt = -100A/μs ??

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

? V DD = -25V, Starting T J = 25°C, L = 2.1mH

R G = 25 ? , I AS = -16A. (See Figure 12)

? Pulse width ≤ 300μs; duty cycle ≤ 2%.

? Uses IRF5305 data and test conditions

? I SD ≤ -16A, di/dt ≤ -280A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

2

www.irf.com

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

IRF530A MOSFET N-CH 100V 14A TO-220

IRF530NL MOSFET N-CH 100V 17A TO-262

IRF530STRLPBF MOSFET N-CH 100V 14A D2PAK

IRF540NL MOSFET N-CH 100V 33A TO-262

IRF540STRR MOSFET N-CH 100V 28A D2PAK

IRF5800TRPBF MOSFET P-CH 30V 4A 6-TSOP

IRF5804TRPBF MOSFET P-CH 40V 2.5A 6-TSOP

IRF6100PBF MOSFET P-CH 20V 5.1A FLIPFET

相关代理商/技术参数

IRF5305LHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-262

IRF5305LPBF 功能描述:MOSFET MOSFT PCh -55V -31A 60mOhm 42nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRF5305PBF 功能描述:MOSFET MOSFT PCh -55V -31A 60mOhm 42nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRF5305S 功能描述:MOSFET P-CH 55V 31A D2PAK RoHS:否类别:分离式半导体产品 >> FET - 单系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

IRF5305SHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 31A 3PIN D2PAK - Bulk

IRF5305SLPBF 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Process Technology

IRF5305SPBF 功能描述:MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRF5305STRL 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, D2-Pak